Designing Ferroelectric Field-Effect Transistors Based on the Polarization-Rotation Effect for Low Operating Voltage and Fast Switching

The effect of polarization rotation on the performance of metal-oxide-semiconductor field-effect transistors is investigated with a Landau-Ginzburg-Devonshire theory-based model. In this analytical model, the depolarization field, polarization rotations, and electrostatic properties of the doped silicon substrate are considered to illustrate the size effect of ferroelectric oxides and the stability of polarization in each direction. Based on this model, we provide guidance in designing electronic logic devices with low operating voltages and low active-energy consumption: First, we demonstrate that MOSFET operation could be achieved by polarization reorientation with a low operating voltage, if the thickness of the ferroelectric oxide is properly selected. Polarization reorientation can boost the surface potential of the silicon substrate, leading to a subthreshold swing S lower than 60 mV=decade. We also demonstrate that, compared with polarization inversion, polarization rotation offers significant advantages, including a lower energy barrier and a wider range of transferability in nanoelectronic devices.